- 174 - mmbd7000 dual surface mount switching diode voltage range 75 volts 350m watts power dissipation features fast switching speed surface mount package ideally suited for automatic insertion for general purpose switching applications high conductance mechanical data case: sot-23, molded plastic terminals: solderable per miil-std-202, method 208 polarity: see diagram marking: kjh weight: 0.008 gram (approx. ) sot-23 dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. maximum ratings type number symbol mmbd7000 units non-repetitive peak reverse voltage vrm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage vrrm vrwm vr 75 v rms reverse voltage vr(rms) 53 v forward continuous current (note 1) ifm 300 ma average rectifier output current (note 1) io 150 ma non-repetitive peak forward surge current @ t=1.0us @ t=1.0s ifsm 2.0 1.0 a power dissipation (note 1) pd 350 mw thermal resistance junction to ambient air (note 1) r ja 357 k/w operating and storage temperature range t j , t stg -65 to + 150 o c electrical characteristics type number symbol min max units reverse breakdown voltage (note 3) ir=100ua v(br) 75 - v forward voltage if=1.0ma if= 10ma if = 50ma if=150ma vf 0.55 0.67 0.75 - 0.70 0.82 1.10 1.25 v peak reverse current vr=50v vr=100v vr=50v, tj=125 vr=20v ir - 1.0 3.0 100 25 ua na junction capacitance vr=0, f=1.0mhz cj - 2.0 pf reverse recovery time (note 2) trr - 4.0 ns notes: 1. valid provided that terminals are kept at ambient temperature. 2. reverse recovery test conditions: if=ir=10ma, irr=0.1 x ir, rl=100 3. test period < 3000us. 0.020(0.51) 0.015(0.37) 0.055(1.40) 0.047(1.19) 0.098(2.50) 0.083(2.10) 0.024(0.61) 0.018(0.45) 0.007(0.178) 0.003(0.076) 0.024(0.61) 0.018(0.45) 0.080(2.05) 0.070(1.78) 0.041(1.05) 0.047(0.89) 0.120(3.05) 0.104(2.65) 0.006(0.15) 0.001(0.013) 0.043(1.10) 0.035(0.89)
ratings and characteristic curves (mmbd7000) fig.1- forward characteristics fig.2- leakage current vs junction temperature i , instantaneous for ward current (ma) f 0.01 0.1 1.0 10 100 1000 01 2 0 100 200 v , instantaneous forward voltage (v) f i , leakage current (na) r t , junction temperature ( c) j 1000 100 10 1 10,000 v =20v r - 175 -
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